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| SMD Type High-Speed Switching Applications 2SA1729 Transistors Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -50 -40 -5 -1.5 -3 1.3 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Gain-Bandwidth Product Output Capacitance Turn-ON Time Storage Time Turn-OFF Time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) Testconditons VCB = -40V , IE = 0 VEB = -3V , IC = 0 VCE = -2V , IC = -100mA VCE = -2V , IC = -1.5A IC = -800mA , IB = -40mA IC = -800mA , IB = -40mA -50 -40 -5 300 18 50 See Test Circuit 120 150 100 220 300 70 25 -0.3 -0.9 -0.8 -1.3 V V V V V MHz pF ns ns ns Min Typ Max -1 -1 280 Unit iA iA V(BR)CBO IC = -10iA, IE = 0 V(BR)CEO IC = -1mA, RBE = V(BR)EBO IE = -10iA, IC = 0 fT Cob ton tstg toff VCE = -2V , IC = -100mA VCB = -10V , f = 1MHz www.kexin.com.cn 1 SMD Type 2SA1729 Test Circuit Transistors hFE Classification Marking Rank hFE 70 Q 140 100 AG R 200 140 S 280 Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type 2SA1729 Transistors www.kexin.com.cn 3 |
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